Carrier recombination properties in low-temperature-grown and ion-implanted GaAs

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Subband gap carrier dynamics in low-temperature-grown GaAs

Measurements of the carrier relaxation dynamics in low-temperature-grown GaAs have been made with a femtosecond-resolution, time-resolved pump-probe technique using a subband-gap probe-beam wavelength. The transient absorption and index of refraction changes have been analyzed using a relaxation model with up to four different excited state populations. The carrier recombination time within the...

متن کامل

Nonstoichiometric Low-Temperature Grown GaAs Nanowires.

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipit...

متن کامل

Investigation of field, carrier, and coherent phonon dynamics in low-temperature grown GaAs

We compare the dynamics of electric field, transport, and coherent phonons in as-grown and annealed low-temperature (LT) GaAs by an electro-optic technique on a subpicosecond time scale. The buildup and decay of space-charge fields associated with the photo-Dember effect are investigated. The recombination dynamics of trapped carriers is monitored via the ps decay of the electro-optic signal. D...

متن کامل

Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates

This letter describes time-resolved differential reflection measurements on low-temperature grown GaAs on ~100! Si substrates. The carrier recombination depends sensitively on growth and anneal conditions. The differential reflectance signals of samples annealed at 600 °C are dominated by an exponential subpicosecond transient, which can be as short as 370 fs. Optical microscopy and atomic forc...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Lithuanian Journal of Physics

سال: 2005

ISSN: 1648-8504

DOI: 10.3952/lithjphys.45404